2sa1585s pnp plastic-encapsulate transistors features ? power dissipation: p d = 0.4w(t amb =25 ) ? collector current: i cm = -2a ? collector-base voltage: v (br)cbo = -20v ? operating and storage junction temperature range t j , t stg : -55 to + 150 electrical characteristics @ 25 unless otherwise specified symbol parameter min typ max unit v ceo collector-emitter voltage (i c =-50 a, i e =0) -20 --- --- v v cbo collector-base voltage (i c =-1 a, i b =0) -20 --- --- v v ebo emitter-base voltage (i e =-50 a, i c =0) -6.0 --- --- v i cbo collector cut-off current (v cb =-20v, i e =0) --- --- -0.1 a i ebo emitter cut-off current (v eb =-5v, i c =0) --- --- -0.1 a h fe dc current gain (v ce =-2v, i c =-0.1a) 120 --- 390 --- v ce(sat) collector-emitter saturation voltage (i c =-2a, i b =-0.1a) --- --- -0.8 2 v f t transition frequency (v ce =2.0vdc, i c =0.5adc) 200 --- --- mhz classification of h fe rank q r range 120-170 180-390 marking 1815q 1815r
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mcc www. mccsemi .com revision: 2 2007/03/02 tm micro commercial components to-92 s ae b c d g dimensions inches mm dim min max min max note a .16 4.00 b .12 3.00 c .59 --- 15.00 --- d .02 0.45 e .08 2.00 g .20 5.00 1 2 3 1. emitter 3. base 2. collector 2sa1585s -q 2sa1585s -r free datasheet http:///
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